Surface Morphology by AFM
Crystallinity measurement by XRC
Characteristics
| Property | Units | Target | Notes |
|---|---|---|---|
| Total thickness of buffer layer | nm | 150~300 | Average of wafer thickness with 5mm pitch |
| Total thickness uniformity | % | σ<20 | |
| XRD FWHM (0002) | arcsec | <100 | Wafer center |
| XRD FWHM (10-12) | arcsec | <400 | Wafer center |
- Deep UV devices
Application field
- High crystal quality of AlN buffer on sapphire.
- High luminance efficiency for deep UV devices
- Low FWHM of AlN buffer layer by XRC